BZV55-C2V4115

Vendor:PHILIPS/NXP

A proprietary process is used to create a surface micro-machined accelerometer. The technology allows to carry out suspended silicon structures which are attached to the substrate in a few points called anchors and are free to move in the direction of the sensed acceleration. To be compatible with the traditional packaging techniques a cap is placed on top of the sensing element to avoid blocking the movi...

BZV55-C2V4115

Vendor:PHILIPS/NXP

A proprietary process is used to create a surface micro-machined accelerometer. The technology allows to carry out suspended silicon structures which are attached to the substrate in a few points called anchors and are free to move in the direction of the sensed acceleration. To be compatible with the traditional packaging techniques a cap is placed on top of the sensing element to avoid blocking the movi...

BZV55-C2V5

Vendor:PHIPackage Cooled:LL34-2.5VD/C:08+

Hynix HYMD232726A(L)8J-J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD232726A(L)8J-J series consists of nine 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD232726A(L)8J-J series provide a high performance 8-byte interface in 5.25" width form fac...

BZV55-C2V7.115

Vendor:NXPPackage Cooled:SOD80CD/C:2008

The 3 Volt Intel® Advanced+ Boot Block Flash Memory (C3) Stacked-Chip Scale Package (Stacked-CSP) device delivers a feature-rich solution for low-power applications. The C3 Stacked-CSP memory device incorporates flash memory and static RAM in one package with low voltage capability to achieve the smallest system memory solution form-factor together with high-speed, low-power operations. The C3 Stack...

BZV55-C2V7.115

Vendor:NXPPackage Cooled:SOD80CD/C:2008

The 3 Volt Intel® Advanced+ Boot Block Flash Memory (C3) Stacked-Chip Scale Package (Stacked-CSP) device delivers a feature-rich solution for low-power applications. The C3 Stacked-CSP memory device incorporates flash memory and static RAM in one package with low voltage capability to achieve the smallest system memory solution form-factor together with high-speed, low-power operations. The C3 Stack...

BZV55-C2V7/T1 PBF

BZV55-C2V7115

Vendor:PHILIPS/NXP

Note 4: For a power supply of 5V r10% the worst-case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing with this supply. Worst-case VIH and VIL occur at VCC 5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst-case leakage cur- rent (IIN, ICC, and IOZ) occur for CMOS at the higher voltage and so the 6.0V values should be used.

BZV55C30

D/C:09+

(13) Interrupts: 14 sources, 10 vectors 1) Three priority (low, high and highest) multiple interrupts are supported. During interrupt handling, an equal or lower priority interrupt request is postponed. 2) If interrupt requests to two or more vector addresses occur at once, the higher priority interrupt takes precedence. In the case of equal priority levels, the vector with the lowest address takes ...

BZV55-C30

If NOTL is high, 16 successive correct watchdog signals TWD within the pulse width of TuWD < TWD < ToWD are needed to create the internal signal nfwd (no failure watchdog) to start the down counter. After a time delay of tDelay= 400 ms, the output NOTL is switched to low (see Figure 4).

BZV55-C30/P

Vendor:ＮＸＰ

BZV55-C30115

Vendor:NXPPackage Cooled:N/AD/C:08+

The Hynix HYM71V16M635AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

BZV55C33

D/C:09+

s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s Complies with JEDEC standards: x JESD8-12 (0.8 V to 1.3 V) x JESD8-11 (0.9 V to 1.65 V) x JESD8-7 (1.2 V to 1.95 V) x JESD8-5 (1.8 V to 2.7 V) x JESD8-B (2.7 V to 3.6 V) s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consump...

BZV55-C33/P

Vendor:ＮＸＰ

BZV55-C33115

Vendor:PHILIPS/NXP

Four independent full-duplex asynchronous 16C950 high performance UART channels 128-byte deep FIFO per transmitter and receiver UARTs fully software compatible with industry standard 16C55x type UARTs Pin compatible with TL16C554 and ST16C654 Baud rates up to 15 Mbps in normal mode and 60Mbps in external 1x clock (isochronous) mode Readable FIFO levels Flexible clock prescaler from 1 to 31.875 Auto...

BZV55C36

D/C:09+

The IEEE 1284 specification requires both termination and EMI filtering on a total of 17 lines. Basic filtering is provided through the presence of a capacitor on all sig- nal lines. The filter capacitor is the junction capacitance of an ESD diode. The typical capacitance at a reverse voltage of 2.5V is 150pF. This diode capacitance is somewhat voltage dependent. See Figure 1.

BZV55-C36115

Vendor:PHILIPS/NXP

When the scaler/interlacer is bypassed, a second VGA monitor can be connected to the RGB outputs and separate H and V-syncs as well, thereby serving as an auxiliary monitor at maximum 1280 1024 resolution/60 Hz (PIXCLK < 85 MHz). Alternatively this port can provide Y, PB and PR signals for HDTV monitors.

BZV55-C36115

Vendor:PHILIPS/NXP

When the scaler/interlacer is bypassed, a second VGA monitor can be connected to the RGB outputs and separate H and V-syncs as well, thereby serving as an auxiliary monitor at maximum 1280 1024 resolution/60 Hz (PIXCLK < 85 MHz). Alternatively this port can provide Y, PB and PR signals for HDTV monitors.

BZV55C39

D/C:09+

The ingenious architecture of FX2LP results in data transfer rates of over 53 Mbytes per second, the maximum-allowable USB 2.0 bandwidth, while still using a low-cost 8051 microcon- troller in a package as small as a 56 QFN. Because it incorpo- rates the USB 2.0 transceiver, the FX2LP is more economical, providing a smaller footprint solution than USB 2.0 SIE or external transceiver implementations. Wi...

BZV55-C39115

Vendor:PHILIPS/NXP

DC to GND DC to BAT BAT, CHG, POK, USB to GND Operating Temperature Range Junction Temperature Range Storage Temperature Range Lead Temperature (soldering, 10s) Continuous Power Dissipation (TA = +70C) 5-Pin Thin SOT23 Derates above +70C 5-Pin Thin SOT23

BZV55-C39V

Vendor:PHILIPSPackage Cooled:LL34-39VD/C:08+

The BZV55-C39V and MT9174 are identical except for the BZV55-C39V having a shorter loop reach. The generic "DNIC" will be used to reference both devices unless otherwise noted. The BZV55-C39V/74 are fabricated in Mitels ISO2-CMOS process.

BZV55C3V0

D/C:09+

Dual MOSFET Drives for Synchronous Rectified Bridge Adaptive Shoot-Through Protection 0.5Ω On-Resistance and 4A Sink Current Capability Supports High Switching Frequency up to 2MHz - Fast Output Rise and Fall Time - Low Propagation Delay

BZV55-C3V0

Vendor:PHILIPSD/C:O9+

The MBRS320TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection.

BZV55-C3V0 /T3

Vendor:ＮＸＰ

BZV55-C3V0(3V)

Vendor:PHILIPS

Besides replacing fixed regulators, the LM117 is useful in a wide variety of other applications. Since the regulator is "Floating" and sees only the input-to-output differential voltage, supplies of several hundred volts can be regulated as long as the maximum input to output differential is not exceeded, (i.e., avoid short-circuiting the output). Also, it makes an especially simple adjustable s...

BZV55-C3V0.115

Vendor:NXP/PhilipsD/C:07+

The ICC supply current is reduced by applying a logic-high level on E to enter the standby mode. In the standby mode, the outputs are placed in the high-impedance state. Applying a CMOS logic-high level on E reduces the current to 100 µA maximum.

BZV55-C3V0115

Vendor:PHILIPS

SG1 applied to TP29 ,TP31 and TP33,SG10 applied to TP41,SG2 applied to TP51, define the each amplitude (BLK-WHT) at SW26=H, and TP27=0V,2.5V,5V as V1,V2 and V3, measure the each output of the non-inverting GCT1=20LOG(V1/V2) GCT2=20LOG(V3/V2) Rout,Gout,Bout terminals. SG3(100KHz,1.8MHz) applied to TP19,SG10 applied to TP41,SG2 applied to TP51,measure amplitude on TP46 of non-inverting. Define the ea...

BZV55-C3V0115

Vendor:PHILIPS

SG1 applied to TP29 ,TP31 and TP33,SG10 applied to TP41,SG2 applied to TP51, define the each amplitude (BLK-WHT) at SW26=H, and TP27=0V,2.5V,5V as V1,V2 and V3, measure the each output of the non-inverting GCT1=20LOG(V1/V2) GCT2=20LOG(V3/V2) Rout,Gout,Bout terminals. SG3(100KHz,1.8MHz) applied to TP19,SG10 applied to TP41,SG2 applied to TP51,measure amplitude on TP46 of non-inverting. Define the ea...

BZV55C3V3

D/C:09+

Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 3 V, IC = 7 mA, f = 2.0 GHz Insertion Power Gain at VCE = 1V, IC = 3 mA, f = 2.0 GHz Insertion Power Gain at VCE = 3V, IC = 20 mA, f = 2.0 GHz Forward Current Gain3 at VCE = 1 V, IC = ...

BZV55C3V3

D/C:09+

Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 3 V, IC = 7 mA, f = 2.0 GHz Insertion Power Gain at VCE = 1V, IC = 3 mA, f = 2.0 GHz Insertion Power Gain at VCE = 3V, IC = 20 mA, f = 2.0 GHz Forward Current Gain3 at VCE = 1 V, IC = ...

BZV55-C3V3

Vendor:PHILIPSPackage Cooled:LL34D/C:05++

The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is co...

BZV55-C3V3 3.3V

Vendor:PHILIPSD/C:03+

BZV55-C3V3 T/R

Vendor:ＮＸＰ

BZV55-C3V3/T1 PBF

BZV55-C3V3115

The inductor and varactor elements of the tank circuits are integrated on-chip, greatly simplifying application of the part. In addition, the center frequency of oscillation and frequency span are factory preset to provide a guaranteed frequency range versus control voltage. An external tuning voltage controls the oscillation frequency. The output signals are buffered by an amplifier stage matched on-chip to...

BZV55-C3V3115

The inductor and varactor elements of the tank circuits are integrated on-chip, greatly simplifying application of the part. In addition, the center frequency of oscillation and frequency span are factory preset to provide a guaranteed frequency range versus control voltage. An external tuning voltage controls the oscillation frequency. The output signals are buffered by an amplifier stage matched on-chip to...

BZV55C3V3-D1

Vendor:N/APackage Cooled:N/AD/C:08+09+

If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan.

BZV55C3V6

D/C:09+

Users can also program the part using the Cypress CyclocksRT software that is found on the web. There are two ways the user can program the part on the candy boards: either open up a new or existing CY22393 JEDEC file, or select the Options menu and click on Candy Board Setup to program the part.

BZV55-C3V6 3.6V

Vendor:PHILIPSD/C:LL-34

BZV55-C3V6115

Vendor:PHILIPS/NXP

Each port has a current-limited 100-mΩ N- channel MOSFET high-side power switch for 500 mA self-powered operation. Each port also has a current-limited 500-mΩ N-channel MOS- FET high-side power switch for 100-mA bus- powered operation. All the N-channel MOSFETs are designed without parasitic diodes, preventing current backflow into the inputs.

BZV55-C3V6115

Vendor:PHILIPS/NXP

Each port has a current-limited 100-mΩ N- channel MOSFET high-side power switch for 500 mA self-powered operation. Each port also has a current-limited 500-mΩ N-channel MOS- FET high-side power switch for 100-mA bus- powered operation. All the N-channel MOSFETs are designed without parasitic diodes, preventing current backflow into the inputs.

BZV55C3V9

D/C:09+

The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

BZV55C3V9

D/C:09+

The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

BZV55-C3V9.115

Vendor:NXPPackage Cooled:SOD80CD/C:2008

Case: Similar to DO-214AA Terminals: Leads tin plated Thermal resistance: 25C/W (maximum) junction to lead at mounting plane Polarity: Cathode indicated by a band Packaging: Standard 12 mm tape 2500 per 13 inch reel see (EIA Standard RS-481)

BZV55-C3V9/T1 PBF

BZV55-C3V9115

Vendor:PHILIPS/NXP

During a Read operation, data is registered for decreased cycle time. Each port contains a burst counter on the input address register. After externally loading the counter with the initial address, the counter will increment the address inter- nally (more details to follow). The internal Write pulse width is independent of the duration of the R/W input signal. The internal Write pulse is self-timed to allow ...

BZV55C3V9L1

BZV55-C407

BZV55C43

The receive (RX) section of the CYP(V)15G0401DXB Quad HOTLink II consists of four byte-wide channels that can be operated independently or synchronously bonded for greater bandwidth. Each channel accepts a serial bit-stream from one of two PECL-compatible differential line receivers and, using a completely integrated PLL Clock Synchronizer, recovers the timing information necessary for data reconstruction. Ea...

BZV55-C43

D/C:07+

BZV55-C43115

Vendor:PHILIPS/NXP

The BZV55-C43115 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in low-cost, surface-mountable plastic SOT-86 and SOT-89 packages. The BZV55-C43115 is also available in a lead-free/green/Ro...

BZV55-C47

Vendor:PHILIPSPackage Cooled:LL34-47VD/C:08+

The modulation and bias currents are programmable via the MSET and BSET control pins. By driving these pins with control voltages, the user has the flexibility to implement various average power and extinction ratio control schemes, including closed-loop control and look-up tables. The automatic laser shutdown feature allows the user to turn on/off the bias and modulation currents by driving the ALS pi...

BZV55-C47V

BZV55C4V3

D/C:09+

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance ...

BZV55C4V3

D/C:09+

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance ...

BZV55-C4V3

Vendor:NXPPackage Cooled:LL34D/C:09+PBF

The device operates from a 32.768 kHz crystal with an on-chip PLL generating the required internal operating frequency. The output data rate from the part is fixed via the master clock at 19.79 Hz and provides simultaneous 50 Hz and 60 Hz rejection at this update rate. At this update rate, 18-bit p-p resolution can be obtained.

BZV55-C4V3/T1 PBF

BZV55-C4V3115

Vendor:PHILIPS/NXP

Notes: 1. DQ-to-I/O wiring may be changed within a byte 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ/DQS resistors should be 18 Ohms. 4. VDDID strap connections(for memory device VDD, VDDQ); Strap out :(open) : VDD=VDDQ Strap In (Vss) : VDD=VDDQ 5. Address and control resistors should be 22 Ohms

BZV55-C4V3-115

Vendor:PHILIPSPackage Cooled:LL34-4.3VD/C:0427+

An access time of 90, 100, 110, or 120 ns is available. Note that each access time has a specific operating voltage range (VCC) and an I/O voltage range (VIO), as specified in the Product Selector Guide and the Order- ing Information sections. The device is offered in a 63-ball Fine-Pitch BGA or 64-ball Fortified BGA pack- age. Each device has separate chip enable (CE#), write enable (WE#) and output...

BZV55C4V7

D/C:09+

1.6 to 5.5V wide operating voltage range 0.5µA (typ.) current consumption (VDD = 3.0V, CE = Low) 3-wire serial interface control Day, day-of-week, hour, and minute alarm inter- rupt function 1/4096 seconds to 255 minutes presettable interval timer interrupt function Time update detection function Abnormal oscillation detection function Automatic leap-year adjustment function (Western and Japan...

BZV55-C4V7 /T3

Vendor:ＮＸＰ

BZV55-C4V7 T/R

Vendor:ＮＸＰ

BZV55C4V7.115

d) Figure 4 shows the load terminated at point A. This point could be connected to a number of places depending on the application. For ex- ample: Connection to ground will test the high side device. Connection to DC BUS will test the low side device. It could also be connected to the center point of a capacitive divider (UPS systems).

BZV55-C4V7.115

Vendor:NXPPackage Cooled:ZENER DIODESD/C:200623AA

* Output current rating may be limited by duty cycle, ambient temperature, and heat sinking. Under any set of conditions, do not exceed the specified current rating or junction temperature. † Internal filtering provides protection against transients during the first 1 µs of the current-sense pulse.

BZV55-C4V7.115

Vendor:NXPPackage Cooled:ZENER DIODESD/C:200623AA

* Output current rating may be limited by duty cycle, ambient temperature, and heat sinking. Under any set of conditions, do not exceed the specified current rating or junction temperature. † Internal filtering provides protection against transients during the first 1 µs of the current-sense pulse.

BZV55-C4V7115

Dimensions InchesMillimeters MinMaxMinMax .87522.22 .250.450.63511.43 .495.52512.5713.34 .131.1883.334.78 .060.1351.523.43 .0501.27 .038.0430.971.09 .312.5007.9212.70 .151.1653.844.19 1.1771.19729.9030.40 .420.44010.6711.18 .205.2255.215.72 .655.67516.6417.14

BZV55-C4V7115

Dimensions InchesMillimeters MinMaxMinMax .87522.22 .250.450.63511.43 .495.52512.5713.34 .131.1883.334.78 .060.1351.523.43 .0501.27 .038.0430.971.09 .312.5007.9212.70 .151.1653.844.19 1.1771.19729.9030.40 .420.44010.6711.18 .205.2255.215.72 .655.67516.6417.14

BZV55-C4V7T/R

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

BZV55-C51

Vendor:PHILIPSPackage Cooled:08+D/C:97500

The TLH.64.. series was developed for standard applications like general indicating and lighting pur- poses. It is housed in a 5 mm tinted diffused plastic package. The wide viewing angle of these devices provides a high on-off contrast. Several selection types with different luminous inten- sities are offered. All LEDs are categorized in lumi- nous intensity groups. The green and yellow LEDs are c...

BZV55C51.115

BZV55C56.115

BZV55C5V1

Vendor:N/APackage Cooled:N/AD/C:08+09+

On each channel, the transmitter accepts up to 10-bit wide parallel SSTL_2 or HSTL Class I/O (Figure 2-1) data, which is then serialized into high-speed NRZ (Non-Return to Zero) serial streams. The effective serial output impedance is nominally 150Ω differential.

BZV55-C5V1 /T3

Vendor:ＮＸＰ

BZV55-C5V1.115

Vendor:NXP/PhilipsD/C:07+

The AD7739 is a high precision, high throughput analog front end. True 16-bit p-p resolution is achievable with a total conversion time of 250 µs (4 kHz channel switching), making it ideally suited to high resolution multiplexing applications.

BZV55-C5V1115

Vendor:PHILIPS/NXP

Thoughtful design results in these devices having significantly lower noise at low gains than similar IC microphone preamps. At zero dB gain, equivalent in- put noise of the THAT 1510 is 55 nV/ÖHz, nearly 6 dB better than competitive IC designs. The un- usual topology of the THAT 1512 results in an equiv- alent input noise of 34 nV/ÖHz at zero dB gain, which makes it comparable to some of ...

BZV55-C5V15.1V

Vendor:PHILIPSPackage Cooled:OOD/C:圆柱

BZV55-C5V1T/R

† Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltag...

BZV55C5V3

BZV55-C5V6

D/C:07+

The TLV320AIC2x implements an extensive power management; including device power-down, independent software control for turning off ADC, DAC, operational-amplifiers, and IIR/FIR filter (bypassable) to maximize system power conservation. The TLV320AIC2x consumes only 14.9 mW per channel at 3 V.

BZV55C5V6 5.6V

BZV55-C5V6.115

Vendor:NXP/PhilipsD/C:07+

CHIP ERASE: If the boot block lockout has been enabled, the Chip Erase function will erase Parameter Block 1, Parameter Block 2, Main Memory Block 1, and Main Mem- ory Block 2 but not the boot block. If the Boot Block Lockout has not been enabled, the Chip Erase function will erase the entire chip. After the full chip erase the device will return back to read mode. Any command during chip erase will be...

BZV55-C5V6115

Vendor:PHILIPS/NXP

3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3).

BZV55C5V6L1

BZV55-C6.0

Vendor:PHILIPS/BDPackage Cooled:N/AD/C:N/A

This pin normally functions as a three-state input that controls the two LSBs of the Serial Bus Address. When this pin is tied to VCC the two LSBs are 01. When tied to Ground, the two LSBs are 10. If this pin is not connected, the two LSBs are 00. This pin also functions as an output during NAND Tree tests (board-level connectivity testing). To ensure proper NAND tree function, this pin should not be t...

BZV55-C6.0

Vendor:PHILIPS/BDPackage Cooled:N/AD/C:N/A

This pin normally functions as a three-state input that controls the two LSBs of the Serial Bus Address. When this pin is tied to VCC the two LSBs are 01. When tied to Ground, the two LSBs are 10. If this pin is not connected, the two LSBs are 00. This pin also functions as an output during NAND Tree tests (board-level connectivity testing). To ensure proper NAND tree function, this pin should not be t...

BZV55C61

Vendor:phPackage Cooled:phD/C:dc89

The maximum power package dissipation is the power dissipation level at which the junction temperature reaches its maximum operating value, i.e. 125C. Depending on the ambient power dissipation and thus the maximum available output current.

BZV55C62

D/C:09+

RSENSE - Are the connections to the bottom of the bridge. All power flowing through the bridge will flow through this point, and can be sensed by connecting a sense resistor from here to ground. The sense resistor will develop a voltage proportional to the current flowing. Size the value and power rating of the sense resistor according to the voltage necessary. 3 volts is the maximum voltage between thi...

BZV55-C62

D/C:2003

• Viewing Angles Match Traffic Management Requirements • Colors Meet Automotive and Traffic Signal Specifications • Superior Light Output Performance in Outdoor Environments • Suitable for Autoinsertion into PC Boards

BZV55C68

D/C:09+

HUSH LITTLE BABY LITTLE STAR LONDON BRIDGE DREAM OF HOME AND MOTHER CHRISTMAS CAROL ARE YOU SLEEPING THE FARMAER IN THE DELL IN A PERSIAN MARKET A LITTLE LAMB LONG LONG AGO SANTA LUCIA LITTLE BROWN JUG BUTTERFLY THE TRAIN IS RUNNING FAST CLOSE ENCOUNTERS OF THIRD KIND

BZV55C68

D/C:09+

HUSH LITTLE BABY LITTLE STAR LONDON BRIDGE DREAM OF HOME AND MOTHER CHRISTMAS CAROL ARE YOU SLEEPING THE FARMAER IN THE DELL IN A PERSIAN MARKET A LITTLE LAMB LONG LONG AGO SANTA LUCIA LITTLE BROWN JUG BUTTERFLY THE TRAIN IS RUNNING FAST CLOSE ENCOUNTERS OF THIRD KIND

BZV55-C6V0

BZV55C6V2

D/C:09+

Four independent IEEE 802.3- compliant 10BASE-T or 100BASE- TX ports in a single chip. 100BASE-FX fiber-optic capable. Standard CSMA/CD or full-duplex operation. Supports auto-negotiation and legacy systems without auto-negotiation capability. Baseline wander correction. 100BASE-TX line performance over 130 meters.

BZV55C6V2

D/C:09+

Four independent IEEE 802.3- compliant 10BASE-T or 100BASE- TX ports in a single chip. 100BASE-FX fiber-optic capable. Standard CSMA/CD or full-duplex operation. Supports auto-negotiation and legacy systems without auto-negotiation capability. Baseline wander correction. 100BASE-TX line performance over 130 meters.

BZV55-C6V2

Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.

BZV55-C6V2 T/R

Vendor:ＮＸＰ

BZV55-C6V2(SOD80/ROHS)/NXP

BZV55C6V2.115

BZV55-C6V2/G

Vendor:PHILIPS ?Package Cooled:05+ROHS?D/C:720000

• Flame retardant encapsulant (UL 94V-0). • Completely encapsulated winding provides superior environmental protection and moisture resistance. • High current unit in surface mount package printed with model, inductance value and date code. • Compatible with infrared or conventional reflow soldering methods. • Pick and place compatible.

BZV55-C6V2/LL6.2V

The FM25L16 is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

BZV55-C6V2115

C 512 Kbytes on-chip flash memory single voltage with erase/program controller (full performance, 32-bit fetch) C Up to 320 Kbytes on-chip extension flash memory single voltage with erase/program controller (XBUS performance, 16-bit fetch) C 100K erasing/programming cycles. C Up to 16 Mbytes linear address space for code and data (5m bytes with CAN or I2C) C 2 Kbytes on-chip internal RAM (IRAM) C ...

BZV55C6V2L1